Geometry Dependent Sensitivity of Pseudo-Hall Effect Based Integrated Stress Sensors
Conference: Mikrosystemtechnik Kongress 2005 - Mikrosystemtechnik Kongress 2005
10/10/2005 - 10/12/2005 at Munich, Germany
Proceedings: Mikrosystemtechnik Kongress 2005
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Doelle, M.; Mager, D.; Ruther, P.; Paul, O. (IMTEK – Microsystem Materials Laboratory, University of Freiburg, 79110 Freiburg, Germany)
The sensitivity of integrated stress sensors exploiting the pseudo-Hall effect depends on their geometry. This paper analyzes the relationship between several geometrical device parameters and stress sensitivities related to the input current, to the input voltage, and to the dissipated power. The considered geometrical parameters are: (i) the shape of the active area, (ii) the aspect ratio of rectangular devices, (iii) the location and size of input and output contacts, and (iv) the shape of insulating regions within the active area. Results were obtained using a simulation approach combining affine mapping and finite element analysis. Recommendations for optimal device geometries are made.