Low power - low cost Gaseous Ammonia Sensors based on Flip-Chip Suspended Gate Field Effect Transistors

Conference: Mikrosystemtechnik Kongress 2005 - Mikrosystemtechnik Kongress 2005
10/10/2005 - 10/12/2005 at Munich, Germany

Proceedings: Mikrosystemtechnik Kongress 2005

Pages: 4Language: englishTyp: PDF

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Oprea, A.; Weimar, U. (Institute for Physical and Theoretical Chemistry, Auf der Morgenstelle 15, 72076 Tübingen, Germany)
Simon, E.; Fleischer, M. (Siemens AG, Corporate Technology, Otto-Hahn-Ring 6, 81739 München, Germany)
Frerichs, H.-P.; Wilbertz, Ch.; Lehmann, M. (Micronas GmbH, Hans-Bunte-Str. 19, 79108 Freiburg, Germany)

Low power and low cost ammonia sensors have been produced using polyacrylic acid (PAA) sensing layers in the suspended gate (SG) structures of hybrid field effect transistors (FET). Good functionality and gas sensitivity at room temperature have been achieved at dissipations under 1mW.