High voltage monolithic P-MOS with integrated Start–up Structure
Conference: CIPS 2006 - 4th International Conference on Integrated Power Systems
06/07/2006 - 06/09/2006 at Naples, Italy
Proceedings: CIPS 2006
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Selgi, Lorenzo M.; Arcuri, Luigi; Fragapane, Leonardo (STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy)
A new high voltage PMOS with a monolithic current/thermal sensor, and a start-up circuit has been developed to build a power integrated circuit to be co-packaged with a standard low voltage PWM controller. The integration of the start-up circuit, removing the high voltage from the controller chip and minimizing the high voltage external components, allow to obtain a high performance, low cost, hybrid solution for the next-generation off-line SMPS power IC converter. This device can be easily made by conventional high voltage PMOS fabrication process.