SiC Diodes and MDmesh(TM) 2nd Generation Devices Improve Efficiency in PFC Applications
Conference: CIPS 2006 - 4th International Conference on Integrated Power Systems
06/07/2006 - 06/09/2006 at Naples, Italy
Proceedings: CIPS 2006
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Sorrentino, G.; Melito, M. (STMicroelectronics, Stradale Primosole, 50 - 95121-Catania, Italy)
Raciti, A.; Musumeci, S.; Chimento, F. (DIEES-ARIEL, University of Catania, Viale A. Doria, 6 - 95125-Catania, Italy)
The last MDmesh(TM) generation has achieved very low on-state resistance with ultra fast switching speed. It represents a big step forward in terms of reduced losses, thanks to the greatly reduced on-resistance while maintaining the excellent switching performances of the previous generation. However, the benefits of using the new Superjunction devices could be wasted if the diode characteristics are not good enough. For this reason, a family of SiC diodes has been developed obtaining higher efficiency and, in the meantime, saving cost and space. This new generation of MDmesh and SiC diode have been tested together in a typical application for these devices, a continuous conduction mode (CCM) PFC stage. The results of the analy-sis show the new generation of Super Junction devices, coupled with SiC diodes, offers a remarkable system miniaturization potential because of their very high current capability together with fast switching, giving to the designer additional chances for future high-frequency power conversion.