A novel model building flow for the simulation of proximity effects of mask processes
Conference: EMLC 2007 - 23rd European Mask and Lithography Conference
01/22/2007 - 01/26/2007 at Grenoble, France
Proceedings: EMLC 2007
Pages: 10Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Mas, Jonathan (Master Nanotech, INPG, 38000 Grenoble, France)
Mittermeier, Engelbert (Qimonda AG, QAG PD CS CADB, 81726 Munich, Germany)
Linearity- and proximity effects are present on actual masks even if manufactured with current state-of-the-art mask processes. Currently the mask writers rectify the difference on the target critical dimension generated by these effects by changing the dose in function of the density of the pattern. However, the accuracy of this compensation is limited resulting in a deviation dependent of the critical dimensions (CD) from the design. The consequences of these mask imperfections on the photolithographic results on the wafer get increasingly into focus with each shrink in the semiconductor technology. In this paper we will present a procedure for building mask proximity simulation models. In a first part this new flow will be introduced, then one application on the Electron beam lithography modelling is exposed.