Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by Using Full Wafer Bonding
Conference: ECOC 2007 - 33rd European Conference and Exhibition of Optical Communication
09/16/2007 - 09/20/2007 at Berlin, Germany
Proceedings: ECOC 2007
Pages: 2Language: englishTyp: PDF
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Authors:
Heidrich, H.; Hamacher, M.; Troppenz, U. (Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany)
Syvridis, D.; Alexandropoulos, D.; Mikroulis, S. (National and Kapodistrian Univ. of Athens, Faculty of Science, Dept. of Informatics, Greece)
Tee, C. W.; Williams, K. (University of Cambridge, Engineering Department, UK)
Dragoi, V. (EV Group E. Thallner GmbH, Schaerding, Austria)
Alexe, M. (Max Planck Institute of Microstructure Physics, Halle, Germany)
Cristea, D.; Kusko, C.; Kusko, M. (National Institute for Research and Development in Microtechnologies, Bucharest, Romania)
Abstract:
We summarize results on the processing and characterization of current injected 1.55 µm single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GaInAsP/InP-GaAs full-wafer bonding using a BCB interface.