Extremely high reliability of guardring-free InAlAs avalanche photodiode
Conference: ECOC 2007 - 33rd European Conference and Exhibition of Optical Communication
09/16/2007 - 09/20/2007 at Berlin, Germany
Proceedings: ECOC 2007
Pages: 2Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Ishimura, E.; Nakaji, M.; Ihara, S.; Aoyagi, T.; Ishikawa, T. (High Frequency & Optical Device Works)
Yagyu, E.; Yoshiara, K.; Tokuda, Y. (Advanced Technology R & D Center, Mitsubishi Electric Corporation)
The InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top surface exhibits a record high reliability of over 8000 hours at a high temperature of 200 oC.