Semi-Insulating Buried Heterostructure 1.55micrometer InGaAlAs Electroabsorption Modulated Laser with 60GHz Bandwidth
Conference: ECOC 2007 - 33rd European Conference and Exhibition of Optical Communication - Post-Deadline Papers
09/16/2007 - 09/20/2007 at Berlin, Germany
Proceedings: ECOC 2007
Pages: 2Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Jany, Ch.; Kazmierski, Ch.; Decobert, J.; Alexandre, F.; Blache, F.; Drisse, O.; Carpentier, D.; Lagay, N.; Martin, F.; Derouin, E. (Alcatel Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France)
Johansen, T.; Jiang, Ch. (Technical University of Denmark, Oersted-DTU, 2800 Kgs. Lyngby, Denmark)
We demonstrate an integrated laser-modulator based on AlGaInAs Single Active Layer and Semi-Insulating iron-doped InP burying technology. Components with very short 50micrometer EAM section show up to 60GHz bandwidth together with Static Extinction Ratio of 18dB for the first time.