Oxide Thickness Profile Measurement by Dispersive White-Light Interferometry in CMP Process

Conference: ICPT 2007 - International Conference on Planarization / CMP Technology
10/25/2007 - 10/27/2007 at Dresden, Germany

Proceedings: ICPT 2007

Pages: 8Language: englishTyp: PDF

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Jeong, Haedo; Park, Boumyoung; Kim, Youngjin (Department of Precision & Mechanical Engineering, Pusan National University, Busan 609-735, Korea)
Kim, Hyoungjae (Busan R&D Center, Korea Institute of Industrial Technology, Busan 609-735, Korea)
Ghim, Young-Sik; You, Joonho; Kim, Seung-Woo (Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea)

Thickness profiles of CMPed oxide thin films are precisely measured by means of spectrally-resolved analysis based on dispersive white-light interferometry. This method allows not only the top surface profile but also the film thickness of an oxide film layer to be measured simultaneously with fine lateral and depth resolutions, leading to a complete 3-D tomographical reconstruction of the measured thin film. Besides, very thin films of less than 0.1 µm thickness can be accurately measured with precision in the nanometer range. No mechanical depth scanning is required during measurement, thus the proposed method is fast enough for the non-contact in-line inspection required for effective quality assurance of CMPed wafers.