Characterization of Residual Stress Change of Dielectrics in W-CMP Process Using Finite Element Method Analysis
Conference: ICPT 2007 - International Conference on Planarization / CMP Technology
10/25/2007 - 10/27/2007 at Dresden, Germany
Proceedings: ICPT 2007
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Fukuda, Akira; Mochizuki, Yoshihiro; Hiyama, Hirokuni (Ebara Research Co., Ltd., 4-2-1 Honfujisawa, Fujisawa-shi, Kanagawa 251-8502, Japan)
Tsujimura, Manabu (Ebara Corp.)
We simulated stresses in inter-metal dielectrics in a W/oxide structure before CMP, during CMP, and after CMP by the finite element method analysis. As a result, the stress in the inter-metal dielectrics after releasing the residual stress in the tungsten film was about 100 times larger than the stress caused by CMP. Consequently, it is most likely that releasing the residual stress in the tungsten film by CMP leads to a cracking of the dielectrics observed after CMP. Therefore, we consider it is important to reduce defects in dielectrics and to decrease a residual stress in a W film for preventing the dielectrics from the cracking.