Next Generation Chemical Mechanical Planarization Slurries for Polishing Silicon on Advanced Devices
Conference: ICPT 2007 - International Conference on Planarization / CMP Technology
10/25/2007 - 10/27/2007 at Dresden, Germany
Proceedings: ICPT 2007
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
White, Michael L.; Nam, Chul Woo; Batllo, Francois; Walters, Alicia (Cabot Microelectronics Corp. Aurora, IL)
The development of advanced slurries to meet the rigorous requirements for silicon polishing is discussed. A silicon slurry was developed for planarizing silicon substrates. The mechanism of polishing was studied by polishing kinetics, ζ potential, FTIR and particle size measurements. In addition, a selective slurry which can be tuned to give high to moderate oxide removal and moderate silicon polishing rates has been developed.