CMP issues arising from novel materials and concepts in the BEOL of advanced Microelectronic Devices
Conference: ICPT 2007 - International Conference on Planarization / CMP Technology
10/25/2007 - 10/27/2007 at Dresden, Germany
Proceedings: ICPT 2007
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Gottfried, Knut; Schubert, Ina; Gessner, Thomas (Fraunhofer-Institute for Reliability and Micro-Integration, Reichenhainer Str. 88, 09126 Chemnitz, Germany)
Schulze, Knut; Schulz, Stefan; Gessner, Thomas (TU Chemnitz, Centre for Microtechnologies, Reichenhainer Str. 70, 09126 Chemnitz, Germany)
The feasibility of CMP for interconnect-schemes based on different low-k approaches was investigated. Low-k stacks based on porous MSQ material capped with different dielectric barriers could pass conventional CMP processes without any significant damage. Low-k stacks based on porous SiO2-Aerogel could not meet the stability requirements at present. Airgap architectures were found to be very less sensitive regarding CMP and exhibit an excellent mechanical stability.