New Polish Chemistry and Process for Improved Fixed Abrasive CMP Performance

Conference: ICPT 2007 - International Conference on Planarization / CMP Technology
10/25/2007 - 10/27/2007 at Dresden, Germany

Proceedings: ICPT 2007

Pages: 6Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Menk, G.; Marks, R.; Leung, G.; Iyer, A.; Diao, J.; Zhou, Y.; Lee, C. (Applied Materials, Inc., Sunnyvale, CA 94085, USA)

Fixed abrasive chemical mechanical planarization (CMP) has demonstrated excellent polish planarity with low dishing for direct-polish shallow trench isolation (STI) applications. However, the standard process exhibits a removal fast band near the wafer periphery that degrades polish performance. A new polish chemistry has been developed that dramatically increases the oxide removal rate for a given polish pressure, enabling the use of lower pressure processes. Low pressure polishing improves nitride polish performance and provides a larger CMP process window than is achievable using the baseline process.