Application of the Copper Damascene Process for the Preparation of Electromigration Test Structures
Conference: ICPT 2007 - International Conference on Planarization / CMP Technology
10/25/2007 - 10/27/2007 at Dresden, Germany
Proceedings: ICPT 2007
Pages: 6Language: englishTyp: PDF
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Authors:
Stangl, M.; Acker, J.; Hoffmann, V.; Wetzig, K. (IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany)
Acker, J.; Bartha, J. W. (University of Applied Sciences Lausitz, P.O. Box 101548, D-01958 Senftenberg, Germany)
Künzelmann, U. (Dresden University of Technology, IHM, D-01062 Dresden, Germany)
Abstract:
The damascene technology is widely used for Cu interconnect structures in integrated circuits. Due to the strong variation of the feature sizes and densities of Cu interconnect lines and contact pads involved in electromigration (EM) test structures, the CMP of the excessive Cu layer is very complicated. This paper will present the challenges of removing of Cu and Ta by CMP and the successful application of well prepared Cu interconnects in life-time experiments.