Ultra High Voltage SiC Power Devices and Its Impact on Future Power Delivery System

Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2014

Pages: 8Language: englishTyp: PDF

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Huang, Alex (NSF FREEDM Systems Center, NC State University, USA)
Cheng, Lin; Palmour, John W. (Cree Inc., USA)
Scozzie, Charles (U. S. Army Research Laboratories, USA)

Wide bandgap semiconductor based power devices have the capability to reach higher voltage, higher frequency and higher temperature compared with silicon based power devices. These capabilities have the potential to revolutionize the way we deliver and manage power in the future. This paper reviews the progress of ultra high vltage SiC power devices with a focus on how it will enable the next generation power delivery systems.