Class-E Amplifier with SiC-MOSFET switching at 2.5 MHz
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Haehre, Karsten; Hildebrandt, Nicolai; Kling, Rainer; Heering, Wolfgang (Karlsruhe Institute of Technology (KIT) - Light Technology Institute (LTI), Engesserstr. 13, 76131 Karlsruhe, Germany)
The class-E power amplifier is a soft-switching inverter topology, which enables high efficiency at high switching frequencies of several MHz due to its zero voltage (ZVS) and zero current switching (ZCS) capability. Since silicon carbide (SiC) power transistors enable fast switching speeds and low losses, the application of them in high frequency inverters is current focus of research. To examine the beneficial effects on efficiency, this work presents the application of a SiC MOSFET at a switching frequency of 2.5MHz with an output power up to 830W in a class-E amplifier.