Lateral GaN Transistors - A Replacement for IGBT devices in Automotive Applications
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Roberts, John (GaN Systems Inc., 300 March Rd. #501, Ottawa ON., K2K 2E2, Canada)
The current drive-train power requirements of most hybrid vehicles (HVs) and electric vehicles (EVs) are met by using Silicon IGBT devices. Higher performance can be achieved with GaN power transistors because they can provide lower losses, higher operating temperatures and smaller systems. The improvements offered by the GaN devices are yet to be realized in deployed subsystems. Several groups of researchers are experimenting and reporting upon GaN transistors that are aimed at replacing Si IGBTs. The results achieved by GaN Systems are presented and these are compared to other producers of GaN devices.