Ultra-Low Loss 600V - 1200V GaN Power Transistors for High Efficiency Applications
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 7Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Sheridan, David C.; Lee, D. Y.; Ritenour, Andrew; Bondarenko, Volodymyr; Yang, Jian; Coleman, Charles (RFMD Inc., USA)
An emerging generation of high voltage (600V – 1200V) GaN HEMTs are compared to the best in class existing technologies and are shown to maintain a significant advantage in switching performance. Compared to the latest available GaN and Si superjunction MOSFET at 650V, these GaN devices show > 5X lower switching energies with an Ron Qg product less than 1 nC Ω. These GaN devices are extended to show > 1200V breakdown voltages and have switching losses 4X lower than even SiC MOSFETs with similar ratings.