Ultra-Low Loss 600V - 1200V GaN Power Transistors for High Efficiency Applications

Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2014

Pages: 7Language: englishTyp: PDF

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Sheridan, David C.; Lee, D. Y.; Ritenour, Andrew; Bondarenko, Volodymyr; Yang, Jian; Coleman, Charles (RFMD Inc., USA)

An emerging generation of high voltage (600V – 1200V) GaN HEMTs are compared to the best in class existing technologies and are shown to maintain a significant advantage in switching performance. Compared to the latest available GaN and Si superjunction MOSFET at 650V, these GaN devices show > 5X lower switching energies with an Ron Qg product less than 1 nC Ω. These GaN devices are extended to show > 1200V breakdown voltages and have switching losses 4X lower than even SiC MOSFETs with similar ratings.