1800A/3.3kV IGBT Module using Advanced Trench HiGT Structure and Module Design Optimization
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Kushima, Takayuki; Azuma, Katsunori; Nemoto, Yasuhiro; Koike, Yoshihiko (Hitachi Power Semiconductor Device, Ltd., Japan)
Saito, Katsuaki (Hitachi Europe Ltd., United Kingdom)
1800A/3.3kV IGBT module with the highest current rating was developed. Advanced Trench HiGT structure was used to achieve low loss characteristics. Module electrical and thermal characteristic were optimized in order to reduce thermal resistance and parasitic inductance. The current ratings of new IGBT module can be increased by 20% from the conventional product type.