1200V 4H-SiC Trench Devices
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 7Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Nakamura, Ryota; Nakano, Yuki; Aketa, Masatoshi; Noriaki, Kawamoto; Ino, Kazuhide (ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615-8585, Japan)
The expectations for Silicon Carbide (SiC) devices in advanced power electronics applications for saving energy continue to grow. This paper presents the ROHM 3rd generation, 1200V, 4H-SiC MOSFETs and 1200V 4H-SiC ultralow forward voltage drop (VF) Schottky barrier diodes (SBDs) with trench structure. Firstly, SiC trench MOSFETs, of which mass production is in preparation to start in 2014, exhibits half of the on-resistance (Ron) of the same size, 1200 V, ROHM SiC planar MOSFETs. Secondly, the developed SiC SBDs successfully showed about 0.3V lower VF than that of ROHM conventional 2G SBDs.