Packaging Technology Platform for Next Generation High Power IGBT Modules
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 7Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Hartmann, Samuel; Sivasubramaniam, Venkatesh; Guillon, David; Hajas, David E.; Schuetz, Rolf; Truessel, Dominik; Papadopoulos, Charalampos (ABB Switzerland Ltd., Fabrikstr. 3, 5600 Lenzburg, Switzerland)
To enable smaller and more cost efficient inverter designs, new power modules are designed for low losses, reliable operation at high temperature, high current and high switching frequencies. The IGBT module design presented in this paper features large silicon active area for low on-state losses, good internal temperature distribution, high current conductor leads with well-designed electro-magnetic behaviour and highly reliable joining techniques. Simulation results as well as experimental results from prototypes are presented.