Integrated DC link capacitor/bus enables a 20% increase in inverter efficiency

Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2014

Pages: 8Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Brubaker, Michael; Hosking, Terry; Sawyer, Edward (SBE, USA)
Hage, Dayana El (SBE, Netherlands)
Franke, W.-Toke (Danfoss Silicon Power, Germany)

Voltage overshoot at switch turn-off traditionally limits the DC operating voltage for inverter systems. Mitigation methods include snubber capacitors and intelligent gate control, which add cost and complexity while reducing efficiency. However, the fundamental first step in overshoot reduction is actually minimizing the DC link inductance. The combination of the SBE Power Ring Film CapacitorTM integrated with an optimized bus structure can achieve a DC link inductance below 10nH (approaching 5nH), which is less than typical IGBT half-bridge internal branch values. This enables safely increasing the DC voltage up to 20% as compared to standard configurations, thus improving inverter performance and volume efficiency with existing IGBT’s.