Impact of module parasitics on the performance of fastswitching devices
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Mueller, Christian R.; Buschhorn, Stefan (Infineon Technologies AG, Max-Planck-Str. 5, 59581 Warstein, Germany)
The interplay between the switching performance and parasitic inductances is analyzed. A fast-switching high-voltage power MOSFET is integrated in a power module with variable and distinct controllable parasitic inductances. By the help of a full-factorial approach, the interdependency between module-internal inductances and external ones like the gate inductance is described. It is shown that beyond critical values of the parasitic inductances, the switching losses of the power MOSFET are raised significantly and the switching performance of the devices is altered tremendously. As a result, the mechanisms leading to such critical values for the parasitic inductances are identified. These lead to general restrictions for the utilization of fast-switching devices in the application.