Compact 100A/1200V SiC Power Module for Industrial Applications Using DioMOS (Diode in MOSFET) Devices
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Watanabe, Keisuke; Hozumi, Norimitsu; Kaizaki, Yasuhiro; Nakata, Hideki; Harada, Takashi; Usui, Ryosuke; Sawada, Kazuyuki; Ueda, Tetsuzo (Eiji Fujii, Panasonic Corporation, Japan)
Hiraoka, Hironori; Yamamoto, Hirofumi; Nishimura, Yoshikazu (Sansha Electric Mfg. Co., Ltd., Japan)
This paper describes a compact SiC power module for a 2 in 1 half bridge circuit, free from external fly-wheeling diodes. A new class of SiC MOSFET called DioMOS not only functions as a MOSFET but also as a reverse diode by utilizing an n-type epitaxial channel under the MOS gate for the reverse conduction path. Elimination of external diodes allows the size of the module to be reduced by half in the footprint, which can be very promising for various industrial applications. The current rating and blocking voltage of the module are 100A and 1200V, respectively.