Increasing the Efficiency of a Single Phase Z-Source Inverter by utilizing SiC - MOSFETS
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 7Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Steinbring, Manuel; Pacas, Mario (Universitaet Siegen, Hoelderlinstr. 3, 57068 Siegen, Germany)
Abstract:
Earlier implementations of a single phase Z-Source inverter which were examined in a laboratory set-up have shown a satisfactory behavior with good dynamic performance. However, the major disadvantage was the resulting low efficiency of the whole energy conversion system. In this paper it is shown that the efficiency of the ZSI can be enhanced by replacing the standard Si-IGBTs by new SiC (Silicon Carbide) MOSFETS. In this way the switching losses in the semiconductors can be significantly reduced. The total losses decrease up to 35 % achieving an efficiency improvement of up to 10 %.