Power Loss Estimation in SiC Power BJTs
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDF
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Authors:
Chen, Cheng; Labrousse, Denis; Lefebvre, Stephane (SATIE, France)
Morel, Herve; Buttay, Cyril (Ampere, France)
Andre, Julien (Fairchild Semiconductor, France)
Domeij, Martin (Fairchild Semiconductor AB, Sweden)
Abstract:
Silicon Carbide (SiC) Bipolar Junction Transistors (BJTs) are promising power devices for high power and high temperature applications. For the improvement of transient speeds, effect of the driver base capacitor and anti-saturation diode are studied. To outline their switching performances, SiC BJTs with a blocking voltage of 1200 V are characterized under different base and load currents. Switching speeds and losses are investigated for temperature as high as 200deg C.