Cost Benefits on High Frequency Converter system based on SiC MOSFET approach
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 5Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Abbatelli, Luigi; Macauda, Michele; Catalisano, Giuseppe (STMicroelectronics, Italy)
Boscarato, Albert; Kohout, Daniel (STMicroelectronics, Czech Republic)
Silicon Carbide (SiC) offers many advantages over silicon in the 1200V switches arena representing the best choice for those designers who look for increased power density, safer thermal operation, better efficiency, reduced system form factor as well as a significant reduction of the size and cost of passive components. In this paper it will be shown how the SiC MOSFET can help to maximize the overall performance of a high frequency converter by lowering the overall system cost. The most relevant aspect of this work consists in exploiting the SiC MOSFET capability to work at high frequency through its extremely low switching losses, therefore, the possibility to reduce size, weight and cost of the system with some remarks about logistic cost.