Source modulation technique applied to enhance the Short-Circuit robustness of a PT-IGBT
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 7Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Maresca, Luca; Riccio, Michele; Breglio, Giovanni; Irace, Andrea (University of Naples “Federico II”, Italy)
Sanfilippo, Carmelo; Crudelini, Filippo; El Baradai, Nabil; Carta, Rossano; Merlin, Luigi (Vishay Intertechnologies, Italy)
This work presents an optimum PT-IGBT design aimed to enhance the short-circuit (SC) capability. For the first time, the SC robustness of a 600V Trench PT-IGBT with Source striped geometry is deeply analyzed using a calibrated 3D electro-thermal TCAD simulation procedure and experimental measurements. In order to improve the device SCSOA the influence of the Source modulation percentage and the introduction of a shallow recessed Body contact is analyzed. Results show that a careful design of the Source region is mandatory to prevent a premature thermally-induced latch-up, even if the saturation current is reduced with the modulation technique.