The new ST Super-junction Technologies ideal for Resonant Topologies
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Gaito, Antonino; Stella, Cristiano Gianluca; Ardita, Giovanni (STMicroelectronics, Catania, Italy)
Power supply designers are now the necessity to increase the power density and have an efficient thermal management. An answer to this is in the resonant topologies that more often use the LLC resonant converter. For these topologies, the MOSFET parasitic capacitances can affect the total behaviors increasing switching losses and decreasing efficiency. Aim of this article is to compare the electrical performances of the two most recent ST MOSFET Superjunction technologies, MDmesh II PlusTM low Qg and MDmesh V technology respectively and compare them to the well-known Super-junction competition devices.