MOSFET technologies key parameters to improve the EMI circuit behavior
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Scrimizzi, Filippo; Longo, Giuseppe (STMicroelectronics, Italy)
Circuits that make use of power MOSFET devices in switching applications could be affected by high frequency voltage oscillation that could create electromagnetic emissions, causing malfunctions compromising the working of system itself and others nearby. The origin of EMI (electromagnetic interferences) is linked to the resonance conditions of inductive and capacitive elements that are present in the circuit. This article speaks about how the intrinsic capacitances of power MOSFET devices could have a relevant position on such item, and how by defining a parameter, function of them, is possible to estimate if a device could be affected by voltage oscillations and consequently become a source of electromagnetic interferences.