A Physically Based Scalable SPICE Model for High-Voltage Super-Junction MOSFETs
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDF
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Authors:
Victory, James; Neyer, Thomas; Yazdi, Mehrdad Baghaie (Fairchild Semiconductor, Germany)
Son, Dongkook; Lee, Kwangwon (Fairchild Semiconductor, Korea)
Zhou, Edward; Wang, Jason (Fairchild Semiconductor, China)
Abstract:
This paper proposes a novel physical scalable SPICE model for Super Junction MOSFETs. The model is based on technology process and layout parameters, enabling a direct link between SPICE and process development. One model covers all device sizes and process perturbations. Designers have the ability to optimize a device in a given technology for achieving optimum performance over device size. Further, designers can use the model to predict new technology performance through variation and optimization of the process parameters.