Comparison of Si/SiC Semiconductor Performance Using Experiment- based Simulation
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 9Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Hilden, Tim; Jaenker, Peter (EADS Deutschland GmbH, Munich, Germany)
Frey, Lothar (Friedrich-Alexander-Universitaet, Erlangen, Germany)
Silicon carbide (SiC) is a promising material for power semiconductors as it provides many beneficial properties that can lead to efficient, small, and lightweight power converters. This paper evaluates the benefits of SiC switches in hard switched DC/DC-converters and compares them to traditional silicon (Si) based devices. Information on the performance of the switches and other crucial converter components is gathered from experiments and data sheets and then fed into an algorithm. This algorithm includes a model of an entire converter and calculates numerous possible implementations. By calculating a high number of implementations the best solution for each semiconductor can be found and enables a fair comparison of the semiconductors. With SiC technology, weight savings of up to 58% are possible or an average loss reduction of 46% can be achieved compared to traditional Si semiconductors in a 3 kW converter class.