SiC Mosfet for high temperature motor driving Applications
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Oge, Sebastien; Ouaida, Remy; Peyresoubes, Georges (THALES Microelectronics sas France, Cap Bretagne, Z.A. Le Piquet, 35370 Etrelles, France)
Brosselard, Pierre (Laboratoire AMPERE, Universite de Lyon-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France)
This paper presents the performances expected by using SiC Mosfets for motor drive applications in High Temperature environment. Static and dynamic characterization of SiC Mosfet dice with suitable packaging has been realized with temperature ranging from +25deg C to +250 °C. A specific ageing setup has been built to evaluate the lifetime of the devices in switching conditions at T > 250deg C. The results perm it to conclude in the performances reachable at complete power inverter level.