Challenges in Switching SiC MOSFET without Ringing

Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2014

Pages: 6Language: englishTyp: PDF

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Li, Helong; Munk-Nielsen, Stig (Aalborg University, Denmark)

Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design.