Challenges in Switching SiC MOSFET without Ringing
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 6Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Li, Helong; Munk-Nielsen, Stig (Aalborg University, Denmark)
Abstract:
Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design.