Efficiency Improvement with GaN-Based SSFET as Synchronous Rectifier in PFC Boost Converter
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Yang, Jian (RFMD Inc, 105 East Tasman Dr., San Jose, Ca 95134, USA)
The reverse characteristics of a GaN-based Source-Switched-FET (SSFET) which exhibits ultra-low reverse-recovery-charge comparable to a Silicon on Carbide (SiC) Schottky diode allows its use for synchronous rectification in a power factor correction (PFC) boost converter. In this paper, conduction and switching losses with the GaN-based SSFET and its counterpart SiC Schottky diode in a boost converter operating in continuous conduction mode (CCM) are compared and analyzed under different line and load conditions. Efficiency improvements were achieved by replacing a SiC Schottky diode with the GaN-based SSFET. These improvements were verified in experimental results using a 3kW boost converter.