Low Inductance full SiC Power Module
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 5Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Hatsukawa, Satoshi; Tsuno, Takashi; Toyoshima, Shigenori; Hirakata, Noriyuki (Sumitomo Electric Industries, LTD., Japan)
Low inductance module design is required for a full SiC power module that can achieve a higher switching speed compared to conventional Si IGBT modules. Using a commercially available 3-D electromagnetic field simulator, the authors have designed and developed a low inductance full SiC power module. The inductance of fabricated module was as low as 14 nH between the terminals - while an Si IGBT counterpart measures about 40 nH with the same switching voltage and current.