Analysis of Hybrid MOSFET/IGBT Switches Utilized in High Frequency Resonant Converters
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Bergmann, J.; Broecker, F.; Hoffmann, K. F. (Helmut-Schmidt-University, Faculty of Electrical Engineering, Power Electronics, Holstenhofweg 85, 22043 Hamburg, Germany)
The objective of connecting a MOSFET and an IGBT in parallel is to combine the advantages of both semiconductor technologies. Such hybrid switches have been investigated in a high frequency test setup for resonant converters. These converters are commonly used in high voltage generators (e.g. for medical applications). In this paper three MOSFETs connected in parallel are replaced by a single hybrid switch. For this, a corresponding super-junction MOSFET has been combined with different IGBTs from several manufacturers. The performance of these hybrid switches has been analyzed by efficiency measurements within the test setup for different operating points.