An Accurate Thermal Resistance Testing Method for Power Semiconductors
Conference: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/24/2015 - 06/26/2015 at Shanghai, China
Proceedings: PCIM Asia 2015
Pages: 7Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Zhang, Jin; Qiu, Zhijie; Wen, Xuhui (Institute of Electrical Engineering, Chinese Academy of Sciences, China)
Zhang, Jin; Qiu, Zhijie; Wen, Xuhui (Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, China)
Zhang, Jin; Qiu, Zhijie; Wen, Xuhui (Beijing Engineering Laboratory of Electrical Drive System & Power Electronic Device Packaging Technology, China)
Abstract:
In this paper, the effect of temperature nonlinearities of the packaging materials on the thermal resistance measurement was analyzed by FEM tools. Based on the simulation results, a novel thermal resistance testing method for power semiconductors was proposed to improve the accuracy compared to the published JESD51-14 standard. Experimental results verified the effectiveness of the proposed method.