New Generation of Clustered IGBT with High Ruggedness
Conference: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/24/2015 - 06/26/2015 at Shanghai, China
Proceedings: PCIM Asia 2015
Pages: 6Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Long, Hong Yao; Sweet, Mark R. (University of Sheffield, UK)
Souza, M. M. De; Narayanan, E. M. S. (University of Sheffield, ECO Semiconductor, UK)
In this paper, the characteristics of the next generation of 1200V Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) is fabricated and showing competitive performance to current IGBT technologies by providing the best trade-off between energy losses and ruggedness for industrial power applications. The techniques applied to this novel power device are high density of MOS cells in a ladder design with fine pattern process. The device can achieve 50% lower saturation current density and 10mus short circuit withstanding time at high temperature.