Thermal Comparison of SO8FL and DPAK Power Semiconductor Packages
Conference: PCIM Asia 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/24/2015 - 06/26/2015 at Shanghai, China
Proceedings: PCIM Asia 2015
Pages: 8Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Zaremba, Donald (ON Semiconductor, 5005 E. McDowell Rd., Phoenix, AZ, 85008, USA)
Abstract:
Engineers tasked to increase system power density face a key challenge: the removal of heat generated in semiconductor switches. Newer power device packages such as the SO8FL achieve similar electrical device performance of much larger footprint legacy packages such as the DPAK. The requirement then is to understand how flat lead package technology compares thermally to legacy power packaging. This paper compares thermal performance between the SO8FL and DPAK packages. In addition, this paper addresses the basic definition of semiconductor device thermal resistance and how system thermal boundary conditions affect the effective device thermal resistance.