The State-of-The-Art and Future Trend of Power Semiconductor Devices

Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2015

Pages: 8Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Authors:
Fujihira, Tatsuhiko; Otsuki, Masahito; Ikawa, Osamu; Nishiura, Akira (Fuji Electric Co., Ltd., Japan)
Fujishima, Naoto (Fuji Electric Europe GmbH, Germany)

Abstract:
Growing population and economy of this planet require us to build up a sustainable society system. In electric power conversion, more energy-saving and more resource-saving, efficient systems must be developed. Power devices are the key to develop more efficient electric systems. In Si IGBT, state-of-the-arts are the 7th generation (7G) standard IGBT, 1G RC-IGBT, and 2G RB-IGBT. The era of SiC devices are starting. They increase the output power density per area or per volume, reduce the consumption of natural resources, and increase the efficiency of electric systems. Especially the effects of SiC devices are dramatic.