New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDF
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Authors:
Casady, Jeffrey B.; Pala, Vipindas; Lichtenwalner, Daniel J.; Brunt, Edward Van; Hull, Brett; Wang, Gang-Yao; Richmond, Jim.; Allen, Scott T.; Grider, Dave; Palmour, John W. (Cree, Inc., USA)
Abstract:
For the first time, we present the full characteristics of a newer generation 10kV, 340mOmega SiC MOSFET and 10kV, 15A SiC diode chip set and discuss target applications. The 8.1mm x 8.1mm 10kV SiC MOSFET die was measured to have record low specific RDSON of 100mOmega- cm2 at 25deg C, 15A current rating, and only 6.5mJ total switching energy when switched at 6kV, 15A, 150deg C. The accompanying anti-parallel 10kV diode chip has the same die size, a 25% reduction from previous efforts. This new class of 10kV SiC die is targeted for several new applications, including solid state transformers utilizing a 7.2kV or 4.16kV line-voltage.