Using the on-state-Vbe,sat-voltage for temperature estimation of SiC-BJTs during normal operation
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDF
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Authors:
Frankeser, Sophia; Hiller, Sebastian; Wachsmuth, Gerd; Lutz, Josef (Chair of Power Electronics and EMC, Technische Universität Chemnitz, Germany)
Abstract:
Temperature measurement of power semiconductor devices in real-life application is a desired goal to implement health monitoring methods like thermal impedance spectroscopy. During on-state, the base-emitter voltage of current driven SiC bipolar transistors shows dependency on the collector current but also on the temperature. It is planned to measure the virtual junction temperature of a SiC-BJT through electric sensitive parameters during onstate.