Indirect measurement of junction temperature for condition monitoring of power semiconductor devices during operation

Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2015

Pages: 6Language: englishTyp: PDF

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Authors:
Strauss, Bastian; Lindemann, Andreas (Otto-von-Guericke-University, Germany)

Abstract:
In a power converter, the monitoring of junction temperature Tvj is imperative for overtemperature or overload protection. Further, comparing measured junction temperature during operation with the temperature value calculated by a suitable model allows condition monitoring, i. e. to detect wearout or a deteriorated thermal interface. Since junction temperature within a device can’t be directly measured, it is determined indirectly instead. This paper presents a relatively simple circuit to be added to an IGBT driver which permits to monitor junction temperature of the chip during converter operation as has been demonstrated.