Silicon Carbide Schottky-Barrier Diode Rectifiers with High Avalanche Robustness
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 7Language: englishTyp: PDF
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Authors:
Konstantinov, Andrei; Jinman, Song; Young, Sungmo; Allerstam, Fredrik; Neyer, Thomas (Fairchild Semiconductor, Isafjordsgatan 32C, 16440 Kista, Sweden)
Abstract:
High avalanche robustness is achieved for unclamped inductive load conditions for silicon carbide Schottky diodes with nominal voltage and current rating of 1200 V and 15A. Mean avalanche energy is 0.38 J for a load of 0.02 mH and 0.62 J for 20 mH. Avalanche energy density exceeds 10 J per 1 cm2 of active device area. No change of breakdown voltage is observed for repetitive avalanche test until the diode destruction. The forward voltage drop tends to start increasing at around 77% of destructive avalanche energy.