Evaluation of GaN, SiC and Superjunction in 1 MHz LLC converter
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 6Language: englishTyp: PDF
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Authors:
Zhou, Haihua; Liu, Wenduo; Persson, Eric (Infineon Technologies, USA)
Abstract:
With increasing demand of low profile and high efficiency power conversion, MHz LLC converter is adopted for its soft switching capability in full power range. Recent progress on Wide Band Gap (WBG) devices further enabled LLC converter in higher switching frequency range. In this paper, design guideline for primary side switch is provided. Device and system level evaluation of Gallium Nitride (GaN), Silicon Carbide (SiC) and superjunction as primary side switch in MHz LLC converter are presented. Evaluation includes driver scheme design and switching performance.