Normally-on SiC-JFET Cascode under ZVS conditions
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDF
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Authors:
Haehre, Karsten; Denk, Fabian; Kling, Rainer; Heering, Wolfgang (Karlsruhe Institute of Technoloy (KIT) – Light Technology Institute (LTI), Engesserstr. 13, 76131 Karlsruhe, Germany)
Lueth, Thomas (TRUMPF Hüttinger GmbH + Co. KG, Bötzinger Str. 80, 79111 Freiburg, Germany)
Abstract:
Very fast switching speeds of Silicon Carbide (SiC) power transistors enable significant increases in switching frequency and power density in resonant converter applications. Zero voltage (ZVS) and zero current switching (ZCS) allow inverters to operate in MHz frequency range with minimized switching losses. For hard switching conditions, the normally-on SiC-JFET in a cascode circuit is already well understood. This study presents the switching performance of a JFET cascode with external snubber capacitances and switching waveforms of a ZVS full-bridge inverter at 2 MHz switching frequency.