Impact of the dynamic avalanche on the electrical behavior of HV-IGBTs
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 10Language: englishTyp: PDF
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Authors:
Muenster, Patrick; Wigger, Daniel; Eckel, Hans-Guenter (University of Rostock, Germany)
Abstract:
Minimum switching losses are achieved, if IGBTs is turned off with intrinsic dv/dt. High Voltage IGBTs have a very low doped basis. So the additional holes during turn-off lead to a high gradient of the electrical field and thereby to high maximum field strength, which may result in dynamic avalanche. Modern HV-IGBT can withstand dynamic avalanche for single pulses. In this paper, the behavior of HV-IGBT under repetitive dynamic avalanche stress is investigated.