Potential of RC-IGBTs in Three Phase Three Level Converters
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDF
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Authors:
Gierschner, Sidney; Eckel, Hans-Guenter (University of Rostock, Germany)
Hiller, Marc (Siemens AG, Germany)
Abstract:
The functionality of IGBT and free-wheeling diode is combined in one chip by the Bi-Mode Insulated Gate Transistor (BIGT) [1], [2]. The BIGT enables the use of the whole chip area in both IGBT and diode mode. Due to the larger chip area there is a thermal effect that reduces maximum junction temperature and temperature ripple compared to conventional IGBT/diode module at the same output current [3]. This leads to the possibility of an increase in the output current. This paper investigates the potential of the BIGT in the three level NPC converter and the three level ANPC converter in terms of losses, temperature ripple and output current.