Theoretical Loss Analysis of Power Converters with 1200 V Class Si-IGBT and SiC-MOSFET

Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland

Proceedings: PCIM Europe 2015

Pages: 6Language: englishTyp: PDF

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Authors:
Nakajima, Akira; Nishizawa, Shin-ichi; Ohashi, Hiromichi (National Instituted of AIST, Japan)
Saito, Wataru (Toshiba Corporation Semiconductor and Storage Products Company, Japan)

Abstract:
Power converter efficiencies of 1200-V class Si-IGBT/SiC-SBD hybrid pairs and a SiC-MOSFET/ SiC-SBD pair were theoretically compared at a switching frequency above the limit of human hearing (20 kHz). Si-IGBT losses were simulated by TCAD. SiC device losses were calculated by analytical minimum loss models. Calculated efficiencies of the full-SiC pair were slightly higher than that of the hybrid pairs at conventional current densities less than 200 A/cm2. At a higher current density of 400 A/cm2, the hybrid pairs have a potential of high performance which is comparable with the full-SiC efficiency.